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Bipolar junction transistor

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BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test.

	PNP
	NPN

Schematic symbols for
PNP- and NPN-type
BJTs.

A bipolar junction transistor (BJT or bipolar transistor) is a type of transistor that relies on the contact of two types of semiconductor for its operation. BJTs can be used as amplifiers, switches, or in oscillators. BJTs can be found either as individual discrete components, or in large numbers as parts of integrated circuits.
Bipolar transistors are so named because their operation involves both electrons and holes. These two kinds of charge carriers are characteristic of the two kinds of doped semiconductor material. In contrast, unipolar transistors such as the field-effect transistors have only one kind of charge carrier.
Charge flow in a BJT is due to bidirectional diffusion of charge carriers across a junction between two regions of different charge concentrations. The regions of a BJT are called emitter, collector, and base. A discrete transistor has three leads for connection to these regions. By design, most of the BJT collector current is due to the flow of charges injected from a high-concentration emitter into the base where there are minority carriers that diffuse toward the collector, and so BJTs are classified as minority-carrier devices.